Ascatron AB has developed a unique material technology (3DSiC^®) that makes it possible to fully use the potential of Silicon Carbide (SiC) to handle very high power with minimal losses, while maintaining the reliability on same level as for silicon devices. The company has been supported by EIT InnoEnergy since June 2015 as part of the Innovation Project services to demonstrate and scale-up this three-dimensional silicon carbide epitaxy material for reliable high voltage power switch. This acquisition is yet another proof of EIT InnoEnergy’s impact in developing innovative solutions that have a high commercial impact.

“We are very happy to have supported Ascatron in its journey to market, bringing its advanced epitaxial material technology for high power SiC semiconductors from a R&D to a commercialisation stage. This is yet another proof of how our model for innovation through supporting entrepreneurs at an early stage can bring high value to complex high-tech industry. Ascatron’s 3DSiC^® material technology brings tremendous benefits to the power electronics industry, unlocking new possibilities for electric vehicles or renewable energy, among other applications.”

Power electronics is a key technology for efficient use of electricity. Silicon power semiconductors have been used during the past 30+ years but had reached its physical limits, making it difficult to meet the requirements of today’s power electronic systems, especially in terms of switching frequency and energy losses. Ascatron’s 3DSiC^® material technology achieves higher efficiency, higher energy density, and lower cost of ownership compared to latest silicon-based devices, contributing to a sustainable use of electric energy.